Design of a hardened fast bipolar monolithic Charge Sensitive Preamplifier

Author

Baschirotto, A. ; Castello, R. ; Pessina, G. ; Rancoita, P.G. ; Rattagi, M. ; Redaelli, M. ; Seidman, A. ; Gola, A.

Author_Institution

Dipartimento di Elettronica, Pavia Univ., Italy

fYear

1995

fDate

7-8 March 1995

Abstract

For implementation of a high-speed, radiation hardened, Charge Sensitive Preamplifier (CSP) in the monolithic 2 /spl mu/m BiCMOS technology (called HF2CMOS), the performance of the available NPN and PNP transistors were measured, before and after neutron irradiation. Also monolithic CSPs, realized with the same technology, were irradiated and investigated. The neutron irradiation effect on the base spreading resistance (r/sub bb´/) of the CSP input NPN-transistor is shown. Design strategies, to reduce the radiation damage effects in the CSP performance, were studied. A new CSP design version is proposed. A novel method for measuring the series noise of the CSP, at large input capacitances, was used. The method minimized the errors caused by the CSP rise-time.

Keywords

BiCMOS analogue integrated circuits; integrated circuit noise; neutron effects; preamplifiers; pulse amplifiers; radiation hardening (electronics); 2 micron; BiCMOS technology; CSP rise-time; HF2CMOS; base spreading resistance; charge sensitive preamplifier; input capacitances; neutron irradiation; radiation damage effects; radiation hardened circuit; series noise; BiCMOS integrated circuits; Neutrons; Noise measurement; Noise shaping; Preamplifiers; Radiation hardening; Radiative recombination; Semiconductor device noise; Silicon; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Electronics Engineers in Israel, 1995., Eighteenth Convention of

Conference_Location

Tel Aviv, Israel

Print_ISBN

0-7803-2498-6

Type

conf

DOI

10.1109/EEIS.1995.513813

Filename

513813