Advances in ultra-high linearity E-Mode GaAs PHEMT MMIC amplifiers for use in broadband, high dynamic range applications using complex digital waveforms

Author

Heil, Ted ; Crain, Steve

fYear

2010

fDate

12-13 April 2010

Firstpage

1

Lastpage

4

Abstract

Recent advances in MMIC GaAs PHEMT amplifiers have pushed intermodulation (IM) distortion performance beyond the traditional relationship between intercept point and compressed output power levels making them ideal candidates for use in broadband digital transmission using complex modulation such as OFDM and QAM. Single-ended and push-pull structures have improved IP3 and IP2 performance; however, real benefits are exemplified when characterized for ACPR, EVM and MER. This paper will discuss the performance of a variety of MMIC amplifier designs based upon E-Mode PHEMT technology and the method to characterize these amplifiers for applications that employ complex digital modulation.

Keywords

III-V semiconductors; MMIC amplifiers; OFDM modulation; gallium arsenide; high electron mobility transistors; quadrature amplitude modulation; GaAs; IP2 performance; IP3 performance; OFDM; QAM; broadband applications; broadband digital transmission; complex digital modulation; complex digital waveforms; complex modulation; high dynamic range applications; intermodulation distortion performance; push-pull structures; single-ended structures; ultrahigh linearity E-mode PHEMT MMIC amplifiers; Broadband amplifiers; Digital modulation; Dynamic range; Gallium arsenide; Intermodulation distortion; Linearity; MMICs; PHEMTs; Power amplifiers; Power generation; DOCSIS; Intermodulation; LTE; MMIC amplifiers; PHEMT; WCDMA;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Technology Conference (WAMICON), 2010 IEEE 11th Annual

Conference_Location

Melbourne, FL

Print_ISBN

978-1-4244-6688-7

Type

conf

DOI

10.1109/WAMICON.2010.5461853

Filename

5461853