Title :
Influence of oxygen flow rate during annealing process of Titanium Dioxide thin films
Author :
Musa, M.Z. ; Ismail, A.A. ; Mamat, M.H. ; Noor, U.M. ; Rusop, M.
Author_Institution :
NANO-Electron. Center (NET), Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
Abstract :
Titanium Dioxide (TiO2) thin films have been successfully deposited on glass substrate using sol-gel method. The samples were then annealed in a furnace under different oxygen gas flow rate. Current-Voltage (I-V) measurement, SEM, and UV-Vis characterization are done for all samples. SEM images confirm the nanostructured nature of the thin films. The sample with higher oxygen flow rate shows significant improvement in term of structural and electrical properties.
Keywords :
annealing; scanning electron microscopy; semiconductor thin films; sol-gel processing; titanium compounds; ultraviolet spectra; visible spectra; SEM; TiO2; UV-Vis characterization; annealing; current-voltage measurement; electrical properties; glass substrate; nanostructured nature; oxygen flow rate; scanning electron microscopy; sol-gel method; structural properties; titanium dioxide thin films; Anneal; Dip Coating; Oxygen Flow Rate; Sol-gel; Titanium Dioxide;
Conference_Titel :
Electrical and Computer Engineering (ICECE), 2010 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4244-6277-3
DOI :
10.1109/ICELCE.2010.5700802
