DocumentCode :
2329351
Title :
Influence Of Particles/Impurity Metals In RCA Cleaning Solutions On Surface Contamination.
Author :
Watanabe, M. ; Kanno, I. ; Ohmori, T.
Author_Institution :
Kasei Corporation
fYear :
1994
fDate :
21-22 June 1994
Firstpage :
99
Lastpage :
102
Abstract :
We investigated how the particles and the metals in RCA cleaning solutions contaminate wafer surfaces in 64M DRAM development process. The most dominant factor to keep the cleanliness of wafer in present process is the overall cleanliness of the system, rather than the purity of chemicals itself. The residual contamination on wafers can be kept below detection limits by optimizing the cleaning process and its operation parameters. Therefore the requirements of quality levels for the fed chemicals are supposed not so high for the present 64M DRAM development process.
Keywords :
Chemical processes; Cleaning; Filtration; Impurities; Laboratories; Particle measurements; Pollution measurement; Random access memory; Silicon; Surface contamination;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 1994. Extended Abstracts of ISSM '94. 1994 International Symposium on
Conference_Location :
Tokyo, Japan
Type :
conf
DOI :
10.1109/ISSM.1994.729431
Filename :
729431
Link To Document :
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