DocumentCode
2329360
Title
Ultraclean Wafer Surfaces For High-Performance ULSI Processing
Author
Ito, T.
Author_Institution
ULSI Research Division, Fujitsu Laboratories Ltd.
fYear
1994
fDate
21-22 June 1994
Firstpage
103
Lastpage
106
Abstract
For future ULSI production using cluster chambers or multiprocess chambers, dry cleaning techniques are an attractive alternative to wet processing. Photo excited halogen radicals have been found useful for removing trace metals and native oxides from silicon surfaces without any damaging on silicon oxide and/or silicon substrates. Hydrogen termination has been successfully achieved on
Keywords
Atomic measurements; Chemical hazards; Chemical processes; Cleaning; Etching; Hydrogen; Iron; Silicon; Surface contamination; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 1994. Extended Abstracts of ISSM '94. 1994 International Symposium on
Conference_Location
Tokyo, Japan
Type
conf
DOI
10.1109/ISSM.1994.729432
Filename
729432
Link To Document