Title :
An S-band frontend receiver for mobile TV in 65nm CMOS
Author :
Chalvatzis, T. ; Vavelidis, K. ; Kanakaris, N. ; Vassiliou, I.
Author_Institution :
Broadcom Corp., Athens, Greece
Abstract :
This paper presents a frontend receiver for S-band mobile TV applications. The direct conversion receiver covers the 2.635-2.66 GHz band using a frequency multiplication scheme to generate the LO. The LNA operates either in a digitally controlled gain mode or in a bypass state. The receiver achieves 96 dB of maximum gain with a corresponding NF and out-of-band IIP3 of 2.9 dB and -8 dBm, respectively. The frontend current consumption is 19 mA from 1.2 V power supply. The receiver is implemented in a 65 nm CMOS process.
Keywords :
CMOS integrated circuits; low noise amplifiers; mobile television; television receivers; CMOS process; LNA; S-band frontend receiver; bypass state; conversion receiver; digitally controlled gain mode; frequency 2.635 GHz to 2.66 GHz; frequency multiplication; frontend current consumption; mobile TV; out-of-band IIP3; voltage 1.2 V; wavelength 65 nm; Digital multimedia broadcasting; Digital video broadcasting; Gain control; Mobile TV; Multimedia communication; Noise measurement; Phase locked loops; Satellite broadcasting; TV receivers; Tuners;
Conference_Titel :
ESSCIRC, 2009. ESSCIRC '09. Proceedings of
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4354-3
DOI :
10.1109/ESSCIRC.2009.5325963
