Title :
Comparison of shunt-series shunt-shunt and shunt-series series-shunt dual feedback wideband amplifiers
Author :
Syu, Jin-Siang ; Wu, Tzung-Han ; Meng, Chinchun
Author_Institution :
Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The shunt-series shunt-shunt and shunt-series series-shunt dual feedback amplifiers are demonstrated in this paper using 2-¿m GaInP/GaAs HBT technology. The shunt-series shunt-shunt and shunt-series series-shunt wideband amplifiers achieve a small-signal gain of 31/33 dB with the same 3-dB bandwidth of 6 GHz. The noise figure of both amplifiers is below 3 dB from dc to 10 GHz. In addition, shunt-series shunt-shunt wideband amplifiers without and with a common-drain (CD) configuration are demonstrated using 0.35-¿m CMOS technology. As a result, the amplifier without/with a CD configuration achieves the power gain of 15/18 dB and noise figure of 9.5/10 dB, respectively, at a supply voltage of 3.3 V.
Keywords :
CMOS analogue integrated circuits; feedback amplifiers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; CMOS technology; GaInP-GaAs; HBT technology; common-drain configuration; frequency 0 GHz to 10 GHz; noise figure; power gain; shunt-series series-shunt dual feedback wideband amplifiers; shunt-series shunt-shunt dual feedback wideband amplifiers; size 0.35 mum; size 2 mum; supply voltage; voltage 3.3 V; Bandwidth; Broadband amplifiers; Feedback amplifiers; Feedback loop; Frequency response; Heterojunction bipolar transistors; Impedance matching; Optical amplifiers; Power amplifiers; Shunt (electrical); CMOS; GaInP/GaAs heterojunction bipolar transistor (HBT); Kukielka amplifier; Meyer amplifier; wideband amplifier;
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2010 IEEE 11th Annual
Conference_Location :
Melbourne, FL
Print_ISBN :
978-1-4244-6688-7
DOI :
10.1109/WAMICON.2010.5461880
