Linearization of table-based MOSFET Model parameters for nonlinear quantification

This work presents a unique method to quantify the nonlinear distortion due to several nonlinear parameters in the MOSFET transistor utilizing a table-based model where each of its nonlinear parameters are individually and independently represented. The quantification method is based on a novel technique by which the nonlinearities of the nonlinear elements are removed, and then their description is switched between the nonlinear and linear representations in a superposition approach with the transistorpsilas third-order intermodulation distortion measured every time. Quantification results confirm both the strength of the linearisation techniques and the validity of the method by which individual contribution to distortion from the transistor nonlinear elements can be quantified through nonlinear modeling. All work is carried out in Agilent advanced design systems (ADS), where automation code is implemented in its data display window functions.