Title :
Designing ultra-low voltage PLL Using a bulk-driven technique
Author :
Chao, Ting-Sheng ; Lo, Yu-Lung ; Yang, Wei-Bin ; Cheng, Kuo-Hsing
Author_Institution :
Dept. of SOC Technol. Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
This paper describes an ultra-low voltage phase-locked loop (PLL) using a bulk-driven technique. The architecture of the proposed PLL employs the bulk-input technique to produce a voltage-controlled oscillator (VCO) and the forward-body-bias scheme to produce a divider. This approach effectively reduces the threshold voltage of the MOSFETs, enabling the PLL to be operated at an ultra-low voltage. The chip is fabricated in a 0.13-mum standard CMOS process with a 0.5 V power supply voltage. The measurement results demonstrate that this PLL can operate from 360 to 610 MHz with a 0.5 V power supply voltage. At 550 MHz, the measured rms jitter and peak-to-peak jitter are 8.01 ps and 56.36ps, respectively. The total power consumption of the PLL is 1.25 mW and the active die area of PLL is 0.04 mm2.
Keywords :
CMOS integrated circuits; dividing circuits; phase locked loops; power integrated circuits; voltage control; active die area; bulk-driven technique; bulk-input technique; divider; forward-body-bias scheme; frequency 360 MHz to 610 MHz; power supply voltage; standard CMOS process; threshold voltage; time 8.01 ps; total power consumption; ultra-low voltage PLL; voltage 0.5 V; voltage-controlled oscillator; CMOS process; Jitter; MOSFETs; Phase locked loops; Power measurement; Power supplies; Semiconductor device measurement; Threshold voltage; Voltage measurement; Voltage-controlled oscillators;
Conference_Titel :
ESSCIRC, 2009. ESSCIRC '09. Proceedings of
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4354-3
DOI :
10.1109/ESSCIRC.2009.5325983