Title :
Improved on-chip components for integrated DC-DC converters in 0.13 µm CMOS
Author :
Ni, Jinhua ; Hong, Zhiliang ; Liu, Bill Yang
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
A fully-integrated DC-DC converter with on-chip inductors and capacitors is realized in a 0.13 mum CMOS technology. By using an asymmetric, high-Q inductor, power efficiency comparable to that of converters implemented with off-chip inductors is achieved. Straightforward analysis of high-density capacitor structure results in minimal ESR and optimal filtering of the output. The manufactured converter achieves a peak power efficiency of 80.5 % for an optimal load current of 170 mA and a voltage conversion ratio of 0.76 when switching at 180 MHz. This design is approximately 23 % more efficient than a linear regulator at a voltage conversion ratio of 0.55. A simple voltage mode PWM control keeps the output stable at the desired level, under load conditions from 0 mW to 720 mW.
Keywords :
CMOS integrated circuits; DC-DC power convertors; PWM power convertors; application specific integrated circuits; capacitors; inductors; CMOS technology; asymmetric high-Q inductor; current 170 mA; frequency 180 MHz; high-density capacitor structure; integrated DC-DC converters; load current; on-chip capacitor; power 0 mW to 720 mW; size 0.13 mum; voltage conversion ratio; voltage mode PWM control; CMOS technology; Capacitors; DC-DC power converters; Filtering; Inductors; Manufacturing; Paramagnetic resonance; Pulse width modulation; Switching converters; Voltage;
Conference_Titel :
ESSCIRC, 2009. ESSCIRC '09. Proceedings of
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4354-3
DOI :
10.1109/ESSCIRC.2009.5325987