Title :
A 2.4-GHz 24-dBm SOI CMOS power amplifier with on-chip tunable matching network for enhanced efficiency in back-off
Author :
Carrara, Francesco ; Presti, Calogero D. ; Palmisano, Giuseppe
Author_Institution :
Fac. di Ing., Univ. di Catania, Catania, Italy
Abstract :
In this work, the potential of load adaptation for enhanced back-off efficiency in RF power amplifiers (PAs) is investigated through a 0.13-mum silicon-on-insulator (SOI) CMOS fabrication technology. To this aim, the first CMOS PA with fully integrated reconfigurable output matching network is presented. The PA delivers a 24-dBm maximum output power while operating at 2.4 GHz and 2-V supply voltage. A significant efficiency improvement of up to 34% is achieved through load adaptation, peak efficiency being as high as 65%. Linear operation is also demonstrated under two-tone excitation, since a 16-dBm output power is attained while complying with a -40-dBc IM3 specification.
Keywords :
CMOS analogue integrated circuits; MMIC power amplifiers; UHF power amplifiers; impedance matching; radiocommunication; silicon-on-insulator; RF power amplifier; SOI CMOS power amplifier; enhanced back off efficiency; frequency 2.4 GHz; load adaptation; on chip tunable matching network; reconfigurable output matching network; silicon-on-insulator CMOS fabrication; size 0.13 mum; voltage 2 V; CMOS technology; Fabrication; Impedance matching; Network-on-a-chip; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon on insulator technology; Voltage;
Conference_Titel :
ESSCIRC, 2009. ESSCIRC '09. Proceedings of
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4354-3
DOI :
10.1109/ESSCIRC.2009.5325995
