DocumentCode :
2330083
Title :
A low power, area efficient limiting amplifier in 90nm CMOS
Author :
Tavernier, Filip ; Steyaert, Michiel
Author_Institution :
ESAT-MICAS, K.U. Leuven, Heverlee, Belgium
fYear :
2009
fDate :
14-18 Sept. 2009
Firstpage :
128
Lastpage :
131
Abstract :
A low power limiting amplifier with area efficient offset compensation in 90 nm CMOS is presented. The large time constant needed in the offset compensation feedback loop is boosted by an inverting amplifier to reduce the chip area. On top of this, to reduce the chip area even more, negative capacitors are applied to increase the bandwidth instead of making use of the inductive peaking technique. The proposed circuit has a small-signal gain of 35 dB and a bandwidth of 4.15 GHz. The input sensitivity for a BER of 10-12 is 2.75 mV, 2.9 mV and 3.75 mV for a bitrate of 3, 4 and 5 Gbit/s respectively. The power consumption is only 14.7 mW and the area of the circuit is 0.12 mm2.
Keywords :
CMOS integrated circuits; compensation; error statistics; feedback amplifiers; low-power electronics; microwave amplifiers; BER; CMOS; bandwidth 4.15 GHz; bit rate 3 Gbit/s; bit rate 4 Gbit/s; bit rate 5 Gbit/s; gain 35 dB; inductive peaking technique; inverting amplifier; low-power limiting amplifier; offset compensation feedback loop; power 14.7 mW; power consumption; size 90 nm; voltage 2.75 mV; voltage 2.9 mV; voltage 3.75 mV; Bandwidth; Capacitors; Circuit topology; Clocks; Energy consumption; Limiting; Optical amplifiers; Optical receivers; Power amplifiers; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ESSCIRC, 2009. ESSCIRC '09. Proceedings of
Conference_Location :
Athens
ISSN :
1930-8833
Print_ISBN :
978-1-4244-4354-3
Type :
conf
DOI :
10.1109/ESSCIRC.2009.5325997
Filename :
5325997
Link To Document :
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