Title :
A charge pump circuit by using voltage-doubler as clock scheme
Author :
Huang, Wen Chang ; Liou, Po Chih ; Lin, Keng Yu ; Cheng, Jin Chang
Author_Institution :
Inst. of Electron. Eng., Kun Shan Univ., Tainan, Taiwan
Abstract :
A new charge pump circuit with a clock that shows an increased clock voltage as its stage is increased is proposed in the paper. The charge pump circuit utilizes the cross-connected NMOS, voltage doubler, as a pumping stage. Each stage of the voltage-doubler provides a pair of complementary clock voltages. The clock voltage also increases as the stage of voltage doubler is increased. It shows that a voltage up to 37.85 V was obtained after eight-stage´s pumping of the circuit, through the simulation of HSpice under 0.35 mum process with 2 V of supply voltage and clock voltage.
Keywords :
MOS integrated circuits; charge pump circuits; clocks; voltage multipliers; HSpice simulation; charge pump circuit; clock scheme; cross-connected NMOS; size 0.35 mum; voltage 2 V; voltage 37.85 V; voltage doubler; Capacitors; Charge pumps; Charge transfer; Circuit simulation; Clocks; Diodes; MOS devices; Switches; Switching circuits; Threshold voltage; charge pump; high voltage clock generator; voltage doubler;
Conference_Titel :
Industrial Electronics and Applications, 2009. ICIEA 2009. 4th IEEE Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-2799-4
Electronic_ISBN :
978-1-4244-2800-7
DOI :
10.1109/ICIEA.2009.5138180