DocumentCode :
2330229
Title :
An integrated 10A, 2.2ns rise-time laser-diode driver for LIDAR applications
Author :
Wens, Mike ; Redouté, Jean-Michel ; Blanchaert, Tim ; Bleyaert, Nicolas ; Steyaert, Michiel
Author_Institution :
ESAT-MICAS, K.U. Leuven, Leuven, Belgium
fYear :
2009
fDate :
14-18 Sept. 2009
Firstpage :
144
Lastpage :
147
Abstract :
An integrated laser-diode driver for LIDAR applications in a 0.35 mum 80 V CMOS technology is realized. The integration of the power switch as a n-DMOS allows a peak current of 10 A, with a corresponding rise-time of 2.2 ns and a fall-time of 2.4 ns. Up to the authors knowledge this is a first-time achievement on a monolithic die. The laser can be operated at a maximum duty-cycle of 0.1 %, with a pulse duration of 10 - 50 ns. To overcome the parasitic inductances and their associated voltage drop, a high voltage of 70 V is applied to the LIDAR circuit. In order to drive the power switch within its safe operating area and to make sure the rise- and fall-time is minimized, a pre-driver is integrated on the same die.
Keywords :
driver circuits; integrated optoelectronics; optical radar; semiconductor lasers; switches; current 10 A; size 0.35 mum; time 2.2 ns; time 2.4 ns; voltage 80 V; CMOS technology; Collision avoidance; Driver circuits; Laser radar; Optical pulse generation; Optical pulses; Power generation; Power lasers; Pulse circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ESSCIRC, 2009. ESSCIRC '09. Proceedings of
Conference_Location :
Athens
ISSN :
1930-8833
Print_ISBN :
978-1-4244-4354-3
Type :
conf
DOI :
10.1109/ESSCIRC.2009.5326005
Filename :
5326005
Link To Document :
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