Title :
25V sampling switch for power management data converters in 0.35µm CMOS with DNMOS
Author :
Aksin, Devrim Yilmaz ; Ozkaya, Ilter
Author_Institution :
Sch. of Electr. & Electron. Eng., Istanbul Tech. Univ., Istanbul, Turkey
Abstract :
A new high-voltage bootstrapped sampling switch with input signal range exceeding 11 times its supply voltage is presented. Proposed switch occupies a silicon area of 250 mum by 160 mum in 0.35 mum twin-well CMOS process with drain extended NMOS (DNMOS) capability. The switch safe input signal range is restricted only by the DNMOS drain terminal breakdown voltage, i.e. 50 V . Implemented switch can reliably track and hold 20 VPP signal on 15 VDC at 1 MS/s with 2.2 V supply without forward biasing any parasitic diode. A designed switched capacitor attenuator utilizing proposed high voltage switch can process 20 VPP differential input reliably.
Keywords :
CMOS integrated circuits; MOSFET; attenuators; bootstrap circuits; low-power electronics; semiconductor device breakdown; silicon; switched capacitor networks; DNMOS drain terminal breakdown voltage; Si; high voltage switch; high-voltage bootstrapped sampling switch; parasitic diode; power management data converters; reliable differential input; silicon area; size 0.35 mum; size 160 mum; size 250 mum; switched capacitor attenuator design; twin-well CMOS process; voltage 2.2 V; voltage 25 V; voltage 50 V; CMOS process; Diodes; Energy management; MOS devices; Sampling methods; Signal sampling; Silicon; Switches; Switching converters; Voltage;
Conference_Titel :
ESSCIRC, 2009. ESSCIRC '09. Proceedings of
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4354-3
DOI :
10.1109/ESSCIRC.2009.5326015