Title :
A pixel-shared CMOS image sensor using lateral overflow gate
Author :
Sakai, Shin ; Tashiro, Yoshiaki ; Akahane, Nana ; Kuroda, Rihito ; Mizobuchi, Koichi ; Sugawa, Shigetoshi
Author_Institution :
Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
Abstract :
A lateral overflow integration capacitor (LOFIC) based CMOS image sensor sharing two pixels and without row-select transistors has been developed using a newly added lateral overflow gate which directly connects the photodiode and the LOFIC. A 0.18-mum, 2-Poly 3-Metal CMOS technology with a buried pinned photodiode process was employed for the fabrication of the CMOS image sensor having 1/3.3-inch optical format, 1280H times 960V pixels, and RGB Bayer color filter and on-chip micro-lens on each pixel. The fabricated CMOS image sensor exhibits a high conversion gain of 84-muV/e- and a high full well capacity of 6.9 times 104-e- in spite of its pixel size of 3.0 times 3.0-mum2.
Keywords :
CMOS image sensors; microlenses; photodiodes; CMOS image sensor; RGB Bayer color filter; buried pinned photodiodes; lateral overflow gate; lateral overflow integration capacitor; on-chip micro-lens; row-select transistors; CMOS image sensors; CMOS process; CMOS technology; Capacitors; Color; Optical device fabrication; Optical filters; Optical sensors; Photodiodes; Pixel;
Conference_Titel :
ESSCIRC, 2009. ESSCIRC '09. Proceedings of
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4354-3
DOI :
10.1109/ESSCIRC.2009.5326026