DocumentCode :
2331489
Title :
Optimization of RF magnetron sputtering plasma using Zn target
Author :
Nayan, Nafarizal
Author_Institution :
Microelectron. & Nanotechnol. - Shamsuddin Res. Centre (MiNT-SRC), Univ. Tun Hussein Onn Malaysia, Batu Pahat, Malaysia
fYear :
2010
fDate :
1-3 Dec. 2010
Firstpage :
1
Lastpage :
2
Abstract :
In the present study, the properties of RF magnetron sputtering plasma using Zn target are investigated. The sputtering plasmas were produced in Ar gas and Ar/O2 gases mixture ambient. The plasma properties such as electron density, electron temperature and electron energy distribution function were studied using Langmuir probe measurement. The current-voltage (I-V) property collected from Langmuir probe at various discharge powers.
Keywords :
II-VI semiconductors; Langmuir probes; electron density; plasma temperature; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; RF magnetron sputtering plasma; ZnO; current-voltage property; electron density; electron energy distribution function; electron temperature; thin fims;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-8853-7
Type :
conf
DOI :
10.1109/ESCINANO.2010.5700939
Filename :
5700939
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2331489
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