• DocumentCode
    2331489
  • Title

    Optimization of RF magnetron sputtering plasma using Zn target

  • Author

    Nayan, Nafarizal

  • Author_Institution
    Microelectron. & Nanotechnol. - Shamsuddin Res. Centre (MiNT-SRC), Univ. Tun Hussein Onn Malaysia, Batu Pahat, Malaysia
  • fYear
    2010
  • fDate
    1-3 Dec. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In the present study, the properties of RF magnetron sputtering plasma using Zn target are investigated. The sputtering plasmas were produced in Ar gas and Ar/O2 gases mixture ambient. The plasma properties such as electron density, electron temperature and electron energy distribution function were studied using Langmuir probe measurement. The current-voltage (I-V) property collected from Langmuir probe at various discharge powers.
  • Keywords
    II-VI semiconductors; Langmuir probes; electron density; plasma temperature; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; RF magnetron sputtering plasma; ZnO; current-voltage property; electron density; electron energy distribution function; electron temperature; thin fims;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4244-8853-7
  • Type

    conf

  • DOI
    10.1109/ESCINANO.2010.5700939
  • Filename
    5700939
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2331489