Title :
Junctionless transistors
Author :
Colinge, Jean-Pierre
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
Abstract :
This paper describes the physics and basic properties of junctionless transistors. These FETs are less subject to short-channel effects than devices with junctions, including excellent subthreshold slope and DIBL.
Keywords :
field effect transistors; DIBL; FET; excellent subthreshold slope; junctionless transistors; short-channel effects; MOSFET; SOI; accumulation; multigate transistor; nanowire transistor;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
DOI :
10.1109/IMFEDK.2012.6218561
