• DocumentCode
    2331504
  • Title

    Junctionless transistors

  • Author

    Colinge, Jean-Pierre

  • Author_Institution
    Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
  • fYear
    2012
  • fDate
    9-11 May 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper describes the physics and basic properties of junctionless transistors. These FETs are less subject to short-channel effects than devices with junctions, including excellent subthreshold slope and DIBL.
  • Keywords
    field effect transistors; DIBL; FET; excellent subthreshold slope; junctionless transistors; short-channel effects; MOSFET; SOI; accumulation; multigate transistor; nanowire transistor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
  • Conference_Location
    Osaka
  • Print_ISBN
    978-1-4673-0837-3
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2012.6218561
  • Filename
    6218561
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2331504