DocumentCode :
2331560
Title :
Highly reliable low power solid-state drives (SSDs)
Author :
Takeuchi, Ken
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
fYear :
2012
fDate :
9-11 May 2012
Firstpage :
1
Lastpage :
2
Abstract :
SSDs and emerging storage class non-volatile semiconductor memories such as PCRAM, FeRAM, RRAM and MRAM have enabled innovations in various nano-scale VLSI memory systems for personal computers, multimedia applications and enterprise servers [1,2]. This paper provides a comprehensive review on various state-of-the-art memory system architectures and related memory circuits for the green high performance computing.
Keywords :
VLSI; integrated memory circuits; logic design; low-power electronics; random-access storage; FeRAM; MRAM; PCRAM; RRAM; enterprise servers; high performance computing; low power solid-state drives; memory circuits; multimedia; nano-scale VLSI memory systems; non-volatile semiconductor memories; personal computers; state-of-the-art memory system architectures; ECC; NAND flash memory; SSD; signal processing; storage class memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
Type :
conf
DOI :
10.1109/IMFEDK.2012.6218564
Filename :
6218564
Link To Document :
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