Observation of conductive filament formation in an organic non-volatile memory resistor device

Author

Dao, T.T. ; Tran, T.V. ; Higashimine, K. ; Okada, H. ; Mott, D. ; Maenosono, S. ; Murata, H.

Author_Institution

Japan Adv. Inst. of Sci. & Technol., Ishikawa, Japan

fYear

2012

fDate

9-11 May 2012

Firstpage

1

Lastpage

2

Abstract

In this paper, an organic nonvolatile resistor memory was made from ZnO nanoparticles dispersed in polymethylmethacrylate. The device exhibited a highly reliable characteristic with retention time greater than 10⁵ s. The memory effect originated from conductive filament (CF) formation. The formation process of the CFs was observed by measuring device emission under bias. The CFs were further visualized through analyses of cross-sectional high-resolution transmission electron microscopy image and energy dispersive x-ray spectroscopy elemental mapping.

Keywords

II-VI semiconductors; organic semiconductors; random-access storage; resistors; zinc compounds; ZnO; conductive filament formation; elemental mapping; energy dispersive X-ray spectroscopy; memory effect; organic nonvolatile memory resistor device; organic nonvolatile resistor memory; polymethylmethacrylate; transmission electron microscopy image; Indium tin oxide; Microscopy; Nanoparticles; Nonvolatile memory; Resistance; Switches; Zinc oxide; Conductive filament; Device emission; EDS; HRTEM; Organic nonvolatile memory; ZnO NP;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-4673-0837-3

Type

conf

DOI

10.1109/IMFEDK.2012.6218570

Filename

6218570