Title :
Effect of high-pressure deuterium oxide annealing on Al2O3 deposited by plasma-assisted atomic layer deposition at low temperature
Author :
Yoshitsugu, Koji ; Ohara, Kosuke ; Hattori, Nozomu ; Horita, Masahiro ; Ishikawa, Yasuaki ; Uraoka, Yukiharu
Author_Institution :
Grad. Sch. of Mater. Sci., NAIST, Nara, Japan
Abstract :
Al2O3 thin films were deposited by plasma-assisted atomic layer deposition (PA-ALD), which can have the advantage of low temperature process. Then high pressure deuterium oxide annealing (HPDOA) was performed for reforming qualities of the PA-ALD Al2O3. The leakage current and the breakdown field of metal-oxide-semiconductor capacitors with the Al2O3 film as the gate insulator were improved after HPDOA. In this study, HPDOA is found to be useful for reforming the Al2O3 thin film even if it was deposited by PA-ALD.
Keywords :
alumina; annealing; atomic layer deposition; capacitors; deuterium compounds; leakage currents; plasma CVD; semiconductor thin films; Al2O3; HPDOA; PA-ALD; breakdown field; gate insulator; high-pressure deuterium oxide annealing; leakage current; low temperature process; metal-oxide-semiconductor capacitor; plasma-assisted atomic layer deposition; thin film; Aluminum oxide; Annealing; Atomic layer deposition; Deuterium; Films; MOS capacitors; Silicon; aluminum oxide; atomic layer deposition; deuterium oxide; high-pressure annealing; post deposition annealing;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
DOI :
10.1109/IMFEDK.2012.6218575
