Nanodot-type floating gate memory with high-density nanodot array formed utilizing listeria ferritin

Author

Kamitake, Hiroki ; Ohara, Kosuke ; Uenuma, Mutsunori ; Zheng, Bin ; Ishikawa, Yasuaki ; Yamashita, Ichiro ; Uraoka, Yukiharu

Author_Institution

Nara Inst. of Sci. & Technol., Nara, Japan

fYear

2012

fDate

9-11 May 2012

Firstpage

1

Lastpage

2

Abstract

We formed a high-density two-dimensional nanodot array by utilizing Ti-binding Dps (TD) which is a Listeria ferritin with Ti-binding peptides. A high-density nanodot array over 10¹² cm^-2 was formed on a SiO₂ at low temperature by specific adsorption of TD. The hysteresis of the MOS capacitor with nanodot array formed utilizing TD was larger than that of the MOS capacitor fabricated utilizing ferritin. This research contributes to realizing future memory devices.

Keywords

MOS capacitors; field effect memory circuits; hysteresis; silicon compounds; titanium; Listeria ferritin; MOS capacitor; SiO₂; Ti; binding peptides; high-density nanodot array; high-density two-dimensional nanodot array; hysteresis; memory devices; nanodot-type floating gate memory; Annealing; Arrays; Hysteresis; MOS capacitors; Nanobioscience; Nonvolatile memory; Proteins; bio-nano process; floating gate memory; listeria ferritin;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-4673-0837-3

Type

conf

DOI

10.1109/IMFEDK.2012.6218576

Filename

6218576