Title :
Fundamental study on junction termination structures for ultrahigh-voltage SiC PiN diodes
Author :
Niwa, Hiroki ; Suda, Jun ; Kimoto, Tsunenobu
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
Abstract :
15 kV-class 4H-SiC PiN diodes with various junction termination extension (JTE) structures have been experimentally investigated. JTE-dose dependence of the breakdown voltage for conventional single and two-zone JTE showed a narrow window of optimum JTE-dose to obtain high breakdown voltage. To widen this window, space-modulated JTE (SM-JTE) was introduced. 4H-SiC PiN diodes with SM-JTE showed a highest breakdown voltage of 15 kV, and a widening of the optimum JTE-dose window to obtain ultrahigh-voltage was realized at the same time.
Keywords :
electric breakdown; p-i-n diodes; silicon compounds; wide band gap semiconductors; 4H-SiC PiN diodes; JTE structures; JTE-dose dependence; SiC; breakdown voltage; junction termination structures; optimum JTE-dose window; space-modulated JTE; two-zone JTE; ultrahigh-voltage PiN diodes; voltage 15 kV; Breakdown voltage; Electric breakdown; Fabrication; Junctions; PIN photodiodes; Silicon carbide; Substrates; PiN diode; junction termination extension (JTE); silicon carbide (SiC);
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
DOI :
10.1109/IMFEDK.2012.6218579
