Title :
Analysis of electron traps in SiO2/IGZO interface by cyclic capacitance-voltage method
Author :
Ueoka, Yoshihiro ; Fujii, Mami ; Yamazaki, Haruka ; Horita, Masahiro ; Ishikawa, Yasuaki ; Uraoka, Yukiharu
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol. (NAIST), Nara, Japan
Abstract :
SiO2/IGZO interface was investigated by cyclic capacitance-voltage method. High pressure water vapor annealing improved interface states. We consider that this measurement method is useful for evaluating interface characteristics.
Keywords :
II-VI semiconductors; annealing; electron traps; gallium compounds; indium compounds; interface states; silicon compounds; wide band gap semiconductors; zinc compounds; SiO2-InGaZnO; cyclic capacitance-voltage method; electron trap analysis; high pressure water vapor annealing; interface characteristic evaluation; interface states; measurement method; Annealing; Capacitance; Capacitors; Electric fields; Electron traps; Semiconductor device measurement; Thin film transistors; Capacitance-Voltage; IGZO; Interface trap; TFT;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
DOI :
10.1109/IMFEDK.2012.6218580
