• DocumentCode
    2331968
  • Title

    An efficient method to identify critical gates under circuit aging

  • Author

    Wang, Wenping ; Wei, Zile ; Yang, Shengqi ; Cao, Yu

  • Author_Institution
    Arizona State Univ., Tempe
  • fYear
    2007
  • fDate
    4-8 Nov. 2007
  • Firstpage
    735
  • Lastpage
    740
  • Abstract
    Negative bias temperature instability (NBTI) is the leading factor of circuit performance degradation. Due to its complex dependence on operating conditions, especially signal probability, it is a tremendous challenge to accurately predict the degradation rate in reality. On the other hand, we demonstrate in this work that it is feasible to reliably predict the relative importance of gates under NBTI. By identifying critical gates that are the most important ones for timing degradation, we will be able to effectively protect the circuit from aging, with the minimum design overhead. The proposed method is based on a new timing analysis framework that integrates a NBTI-aware library. For each potential critical path, we prove that there exists a particular signal probability, which leads to the worst case of timing degradation. The search of such worst case signal probability provides a safe guardband for the degradation, yet avoiding overly pessimistic analysis. By applying this method to ISCAS and ITC benchmark circuits at the 65 nm node, we demonstrate that in average only 1% of total gates need to be protected in order to control the timing degradation within 10% in ten years. Since this method only requires one-time analysis of each critical path, it is very efficient in computation. With the information of critical gates available, it further enables other resilient design techniques to mitigate circuit aging under NBTI.
  • Keywords
    logic gates; probability; NBTI-aware library; circuit aging; circuit performance degradation; critical gates identification; negative bias temperature instability; worst case signal probability; Aging; Circuit optimization; Degradation; Integrated circuit reliability; Libraries; Negative bias temperature instability; Niobium compounds; Protection; Timing; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design, 2007. ICCAD 2007. IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA
  • ISSN
    1092-3152
  • Print_ISBN
    978-1-4244-1381-2
  • Electronic_ISBN
    1092-3152
  • Type

    conf

  • DOI
    10.1109/ICCAD.2007.4397353
  • Filename
    4397353