DocumentCode :
2332076
Title :
Anomalous failure in low-voltage p-chanel power MOSFETs during the intrinsic diode recovery time
Author :
Consentino, Giuseppe ; Ardita, Giovanni
Author_Institution :
Power MOSFET Div., STMicroelectron., Crolles
fYear :
2008
fDate :
11-13 June 2008
Firstpage :
1368
Lastpage :
1372
Abstract :
This paper studies and analyzes the root causes of anomalous failures of low-voltage p-channel power MOSFETs during the intrinsic diode recovery time in dV/dt test. In particular, the dV/dt characterization test is described and, afterwards, specific electrical tests are provided to explain the root causes. From the electrical results point of view, the dV/dt slew rate does not involve an intrinsic bipolar transistor turn-on, as usually assumed in these kinds of failure. Instead, a gate oxide degradation occurs causing the device to fail as a result of dV/dt repetitive events. Such kinds of gate oxide degradation were observed measuring the threshold voltage degradation after an established dV/dt train of impulses till the failure occured. Afterwards, the same train of impulses was implemented on a new series of samples, changing the circuit and, in particular, inserting a resistor in the gate electrode. In this test, no failures were observed, even if several repetitive trains of impulses were supplied.
Keywords :
failure analysis; power MOSFET; semiconductor device testing; anomalous failures; dV/dt characterization test; diode recovery time; electrical tests; gate oxide degradation; low-voltage p-channel power MOSFET; threshold voltage degradation; Bipolar transistors; Circuits; Degradation; Diodes; Failure analysis; MOSFETs; Resistors; Testing; Threshold voltage; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics, Electrical Drives, Automation and Motion, 2008. SPEEDAM 2008. International Symposium on
Conference_Location :
Ischia
Print_ISBN :
978-1-4244-1663-9
Electronic_ISBN :
978-1-4244-1664-6
Type :
conf
DOI :
10.1109/SPEEDHAM.2008.4581137
Filename :
4581137
Link To Document :
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