DocumentCode
2332156
Title
TEM observation of directly bonded interface between Si and SiC
Author
Kurumi, Takamasa ; Araki, Ryosuke ; Kinoshita, Hiroyuki ; Yoshimoto, Masahiro
Author_Institution
Sch. of Sci. & Technol., Kyoto Inst. of Technol., Kyoto, Japan
fYear
2012
fDate
9-11 May 2012
Firstpage
1
Lastpage
2
Abstract
We developed an engineered wafer, a Si-on-SiC wafer, in which a Si wafer is directly bonded to single-crystalline 6H-SiC. A remarkable improvement in heat dissipation performance and a 60% reduction in the self-heating effect of Si MOSFET were demonstrated in Si-on-SiC wafer. In this work, Si/SiC directly bonded interface of Si-on-SiC wafers by transmission electron microscope (TEM).
Keywords
MOSFET; cooling; elemental semiconductors; semiconductor device packaging; silicon; silicon compounds; transmission electron microscopy; wide band gap semiconductors; MOSFET; Si; Si-on-SiC wafer; SiC; TEM observation; directly bonded interface; engineered wafer; heat dissipation performance; self-heating effect reduction; single-crystalline 6H-SiC; transmission electron microscope; Annealing; Conductivity; Heating; MOSFET circuits; Silicon; Silicon carbide; Thermal conductivity; TEM; heat dissipation; silicon carbide; wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location
Osaka
Print_ISBN
978-1-4673-0837-3
Type
conf
DOI
10.1109/IMFEDK.2012.6218591
Filename
6218591
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