DocumentCode :
2332255
Title :
Power conversion efficiency characteristics of AlGaAs/GaAs based Schottky diode for on-chip rectenna devices in nanosystem
Author :
Mustafa, Farahiyah ; Parimon, Norfarariyanti ; Hashim, Abdul Manaf ; Abd Rahman, Shaharin Fadzli ; Osman, Mohd Nizam
Author_Institution :
Mater. Innovations & Nanoelectron. Res. Group, Univ. Teknol. Malaysia, Skudai, Malaysia
fYear :
2010
fDate :
1-3 Dec. 2010
Firstpage :
1
Lastpage :
2
Abstract :
In this paper power conversion efficiency characteristics of AlGaAs/GaAs based Schottky diode for on-chip rectenna devices in nanosystem is studied. Schottky contact area, A is 20 μm × 20 μm, the lengths of CPW, LCPW is 100 μm and the distance between Schottky-ohmic contacts, diode is 40 μm. The processing steps used in the fabrication of Schottky diode are the conventional steps used in standard GaAs processing.
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; gallium arsenide; nanofabrication; AlGaAs-GaAs; Schottky diode; Schottky-ohmic contacts; nanosystem; on-chip rectenna device; power conversion efficiency characteristics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-8853-7
Type :
conf
DOI :
10.1109/ESCINANO.2010.5700975
Filename :
5700975
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2332255
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