Structure dependence of reduced saturation current influenced by source and drain resistances for 17 nm MOSFETs

In this work, we investigated the structure dependence of source and drain resistances on saturation currents for 17 nm bulk, SOI and Multi-Gate (MG) MOSFETs. An analytical saturation current model is proposed by considering with the higher order effects of source and drain resistances. For each structure, the saturation current (I_Dsat) were calculated by using the analytical current model. The reduction rates of the saturation currents for bulk, SOI and MG MOSFETs are 20.0, 21.6 and 19.7 %, respectively. It can be found that the reduction rate of SOI MOSFET is the largest. In order to find the physical reasons of the structure dependence, expansion components are analyzed. As a result, we found that the ratio of source resistance to channel resistance is the highly influential part.