Performance prediction of graphene-nanoribbon and carbon nanotube transistors

Technology exploration is carried out through the modeling of zigzag carbon nanotube field-effect-transistors (z-CNTFETs) and armchair graphene nanoribbon field-effect-transistors (a-GNRFETs) with top gate design. The devices are simulated using a top-of-the-barrier model where the energy dispersion for CNTs and GNRs is based on the tight-binding approximation. The structure of these transistors is shown in figures. In armchair GNRs, two Dirac points (K and K´) are merged into one valley (gv=1), whereas for CNTs two discrete valleys (gv=2) are included.