Title :
A reflection layer for enhanced THz radiation from InAs thin films
Author :
Nishisaka, K. ; Maemoto, T. ; Sasa, S. ; Takayama, K. ; Tonouchi, M.
Author_Institution :
Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan
Abstract :
A heavily-doped InAs layer was grown as a reflection layer for enhancing THz radiation. Si δ-doped and uniformly-doped structures were studied. The electron mobility of Si δ-doped InAs was higher than that of uniformly-doped one. The intensity from samples with the reflection layer was stronger than that from that without the reflection layer. This shows that THz radiation intensity from InAs thin films can be enhanced by the reflection layer.
Keywords :
electron mobility; indium compounds; reflection; semiconductor doping; silicon; terahertz waves; thin films; InAs; InAs thin films; Si; Si δ-doped structure; electron mobility; enhanced THz radiation; heavily-doped InAs layer; reflection layer; uniformly-doped structure; Doping; Electron mobility; Laser excitation; Reflection; Reflectivity; Silicon; Substrates; InAs; MBE; THz emission; Thin films;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
DOI :
10.1109/IMFEDK.2012.6218609
