• DocumentCode
    2332539
  • Title

    Bandgap widening of β-FeSi2 deposited by RF-sputtering method using a Si-rich FeSi4 target

  • Author

    Hiehata, Keiichiro ; Shimamoto, Yoshiaki ; Nakamura, Kazuhiro

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Kansai Univ., Suita, Japan
  • fYear
    2012
  • fDate
    9-11 May 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    β-FeSi2 films were deposited on silicon substrates by RF-sputtering method with a Si-rich FeSi4 target and optical absorption properties of the films were investigated. Direct bandgap of the β-FeSi2 films deposited using an FeSi4 target was larger than that using an FeSi3 target because Si crystals were formed in the films deposited using a Si-rich FeSi4 target.
  • Keywords
    infrared spectra; iron compounds; light absorption; optical films; optical materials; sputtered coatings; FeSi2-Si; FeSi4; RF sputtering method; bandgap widening; optical absorption properties; Absorption; Annealing; Optical diffraction; Optical films; Photonic band gap; Silicon; β-FeSi2; Optical properties; RF-sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
  • Conference_Location
    Osaka
  • Print_ISBN
    978-1-4673-0837-3
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2012.6218611
  • Filename
    6218611
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2332539