Title :
Bandgap widening of β-FeSi2 deposited by RF-sputtering method using a Si-rich FeSi4 target
Author :
Hiehata, Keiichiro ; Shimamoto, Yoshiaki ; Nakamura, Kazuhiro
Author_Institution :
Dept. of Electr. & Electron. Eng., Kansai Univ., Suita, Japan
Abstract :
β-FeSi2 films were deposited on silicon substrates by RF-sputtering method with a Si-rich FeSi4 target and optical absorption properties of the films were investigated. Direct bandgap of the β-FeSi2 films deposited using an FeSi4 target was larger than that using an FeSi3 target because Si crystals were formed in the films deposited using a Si-rich FeSi4 target.
Keywords :
infrared spectra; iron compounds; light absorption; optical films; optical materials; sputtered coatings; FeSi2-Si; FeSi4; RF sputtering method; bandgap widening; optical absorption properties; Absorption; Annealing; Optical diffraction; Optical films; Photonic band gap; Silicon; β-FeSi2; Optical properties; RF-sputtering;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
DOI :
10.1109/IMFEDK.2012.6218611
