Title :
Characteristic shift of a CTFT inverter using n-type IGZO and p-type F8T2 TFTs after temperature and operation stresses
Author :
Inoue, Masashi ; Hasegawa, Takayuki ; Nakanishi, Takashi ; Kimura, Mutsumi ; Nomura, Kenji ; Kamiya, Toshio ; Hosono, Hideo
Author_Institution :
Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan
Abstract :
We developed three-dimensional stacked complementary TFT devices using n-type amorphous In-Ga-Zn-O and p-type poly-(9, 9-dioctylfluorene-co-bithiophene) TFTs. In this presentation, we will report the characteristic shift of the CTFT inverter after temperature and operation stresses. The characteristic shifts extremely negatively after temperature stress. This is caused by the characteristic degradation of the F8T2 TFT. On the other hand, the characteristic shifts gradually positively after operation stress. This is caused by the characteristic degradation of the a-IGZO TFT.
Keywords :
gallium; indium; invertors; oxygen; thin film transistors; zinc; CTFT inverter; In-Ga-Zn-O; characteristic degradation; characteristic shifts; n-type IGZO; n-type amorphous TFT; operation stresses; p-type F8T2 TFT; p-type poly-9,9-dioctylfluorene-co-bithiophene TFT; temperature stresses; three-dimensional stacked complementary TFT devices; Degradation; Inverters; Logic gates; Polymers; Stress; Temperature; Thin film transistors; amorphous In-Ga-Zn-O (a-IGZO) TFT; characteristic shift; complementary TFT (CTFT); inverter; operation stress; poly-(9, 9-dioctylfluorene-co-bithiophene) (F8T2) TFT; temperature stress;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
DOI :
10.1109/IMFEDK.2012.6218614
