DocumentCode :
2332678
Title :
Effects of various metal contacts on contact resistance and barrier height of metal/graphene interface
Author :
Rahman, Shaharin Fadzli Abd ; Al-Obaidi, N.K.A. ; Hashim, Ahmad Mustafa
Author_Institution :
Mater. Innovations & Nanoelectron. Res. Group, Univ. Teknol. Malaysia, Skudai, Malaysia
fYear :
2010
fDate :
1-3 Dec. 2010
Firstpage :
1
Lastpage :
2
Abstract :
Effects of various metal contacts on contact resistance and barrier height of metal/graphene interface are reported. Illustration of graphene-based back-gate FET is done. Graphene sheets are prepared from micromechanical exfoliation of highly ordered pyrolytic graphite (HOPG) are transferred onto 300nm SiO2/p-Si substrate.
Keywords :
aluminium; contact resistance; field effect transistors; gold; graphene; microfabrication; nanocontacts; nanofabrication; narrow band gap semiconductors; nickel; platinum; semiconductor growth; semiconductor-metal boundaries; Al-C; Au-C; Ni-C; Pt-C; SiO2-Si; barrier height; contact resistance; graphene-based back-gate FET; highly ordered pyrolytic graphite; metal contacts; metal-graphene interface; micromechanical exfoliation; size 300 nm; zero bandgap semiconductor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-8853-7
Type :
conf
DOI :
10.1109/ESCINANO.2010.5700995
Filename :
5700995
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2332678
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