Transient performance of silicon-on-insulator (SOI) phase modulator

The paper reports on the transient performance associated with p-i-n silicon-on-insulator (SOI) phase modulator at λ = 1.55 μm. The transient time is characterized by Atlas in terms of carrier concentration against time. The carrier concentration profile for a forward bias of 0.967 volts is taken for reference. The change in carrier concentration compared to a forward bias of 0.967 volts is converted to a change in refractive index profile against time. The rise time t_r is defined as the time required for the induced phase shift to change from 10% to 90% of the maximum value. Likewise, the fall time t_f is defined as the time required for the induced phase shift to change from 90% to 10% of the maximum value.