DocumentCode :
2332764
Title :
Quantum effects of ultrathin OTFT and fabrication processes by atomic hydrogen annealing
Author :
Horiuchi, Tomoyasu ; Heya, Akira ; Matsuo, Naoto
Author_Institution :
Dept. of Mater. Sci. & Chem., Univ. of Hyogo., Himeji, Japan
fYear :
2012
fDate :
9-11 May 2012
Firstpage :
1
Lastpage :
2
Abstract :
We had fabricated the pentacene organic thin-film transistor (OTFT) with very thin film thickness and investigated the electrical characteristics. When the film thickness decreased, the on current of OTFT increased. It is considered that the quantum level is formed in the triangle potential. The mobility of OTFT is improved by using quantum effect. In order to fabricate uniformly ultrathin OTFT without pinhole, the size of pentacene island must be smaller. We tried to fabricate pentacene island using atomic hydrogen annealing (AHA). It is found that pentacene and resist can be etched by AHA without damage. It is expected that this method is a promising technique for fabrication of ultrathin OTFT with small island.
Keywords :
annealing; thin film transistors; AHA; atomic hydrogen annealing; electrical characteristics; fabrication processes; pentacene island; pentacene organic thin-film transistor; quantum effects; quantum level; triangle potential; uniformly ultrathin OTFT; very thin film thickness; Etching; Films; Organic thin film transistors; Pentacene; Resists; Substrates; OTFT; atomic hydrogen annealing; pentacene; quantum effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
Type :
conf
DOI :
10.1109/IMFEDK.2012.6218622
Filename :
6218622
Link To Document :
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