DocumentCode
2332826
Title
Free carrier absorption loss of p-i-n silicon-on-insulator (SOI) phase modulator
Author
Haroon, Hazura ; Razak, Hanim Abdul ; Bidin, Mardiana ; Shaari, Sahbudin ; Menon, P. Sushita
Author_Institution
Inst. of Microengineering & Nanoelectron. (IMEN), Univ. Kebangsaan Malaysia (UKM), Bangi, Malaysia
fYear
2010
fDate
1-3 Dec. 2010
Firstpage
1
Lastpage
2
Abstract
The paper reports on the free carrier absorption (FCA) loss associated with p-i-n silicon-on-insulator (SOI) phase modulator at λ = 1.55 μm. The analyses include the effect of various doping concentration and injected free carrier concentration on the FCA. The simulations are realized utilizing the 2-D semiconductor simulation package SILVACO.
Keywords
doping profiles; electro-optical modulation; p-i-n diodes; phase modulation; semiconductor device models; silicon-on-insulator; 2-D semiconductor simulation package; SILVACO; SOI; Si; doping concentration; free carrier absorption loss; free carrier concentration; p-i-n silicon-on-insulator; phase modulator;
fLanguage
English
Publisher
ieee
Conference_Titel
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-8853-7
Type
conf
DOI
10.1109/ESCINANO.2010.5701003
Filename
5701003
Link To Document