Floating body effect on n-channel bulk FinFETs for memory application

Author

Andrade, M.G.C. ; Almeida, L.M. ; Martino, Joao Antonio ; Aoulaiche, Marc ; Simoen, Eddy ; Claeys, Cor

Author_Institution

Autom. & Integrated Syst., UNESP - Univ. Estadual Paulista, Sorocaba, Brazil

fYear

2014

fDate

2-4 April 2014

Firstpage

1

Lastpage

5

Abstract

In this paper, the floating body effect (FBE) is experimentally investigated on triple gate n-channel Bulk FinFETs for 1T-FBRAM (1 transistor Floating Body Dynamic Random Access Memory) application. A difference between the Direct Current (DC) and the Alternating Current (AC) measurements corresponding with the real memory operation is shown. The large hysteresis under DC measurement related to floating body effects is observed using AC measurement only when the bulk contact is floating. Moreover, it is shown that the stored holes are not in the fins but probably in the ground plane below the junctions. Furthermore, the floating body effect in the Bulk FinFET is observed when the latter is operated like a biristor, confirming the charge storage in the junction capacitor.

Keywords

MOSFET; random-access storage; 1 transistor floating body dynamic random access memory application; 1T-FBRAM application; AC measurements; DC measurements; FBE; alternating current measurements; biristor; bulk contact; charge storage; direct current measurements; floating body effect; junction capacitor; real memory operation; triple gate n-channel bulk FinFET; Current measurement; FinFETs; Hysteresis; Junctions; Logic gates; Random access memory; Bulk; FinFET; back bias; floating body effect; memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICCDCS), 2014 International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

978-1-4799-4684-6

Type

conf

DOI

10.1109/ICCDCS.2014.7016147

Filename

7016147