Effects of sensitivity enhancement by oxide passivation layer on SGOI nanowire fabrication

Author

Chu-Feng Chen ; Kow-Ming Chang ; Yu-Bin Wang ; Chung-Hsien Liu ; Chin-Ning Wu ; Cheng-Ting Hsieh ; Chiung-Hui Lai ; Kuo-Chin Chang

Author_Institution

Dept. of Elec. Eng. & Inst. of Elec., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

fYear

2012

fDate

9-11 May 2012

Firstpage

1

Lastpage

2

Abstract

Increasing the fraction of Ge in SiGe-on-Insulator (SGOI) using Ge condensation by oxidation significantly increases hole mobility. This effect can be exploited to improve the sensitivity of SGOI nanowire. However, our previous studies found that the sensitivity of an SGOI nanowire is degraded as the Ge fraction increases over 20%, because of the surface state of SiGe is unstable when the Ge fraction is high. In this work, a top surface passtivation SiO₂ layer was deposited on an Si_0.8Ge_0.2 nanowire and successfully improve its sensitivity around 2.5 times that of the nanowire sample without top a passivation layer.

Keywords

Ge-Si alloys; condensation; hole mobility; nanofabrication; nanosensors; nanowires; oxidation; passivation; semiconductor-insulator boundaries; sensitivity; surface states; Ge condensation; Ge fraction; SGOI nanowire fabrication; SGOI nanowire sensitivity; Si_0.8Ge_0.2; SiGe surface state; SiGe-on-Insulator; hole mobility; oxide passivation layer; sensitivity enhancement; surface passivation; Nanobioscience; Oxidation; Passivation; Sensitivity; Silicon; Silicon germanium; Bisosensor; Ge-condendation; Nanowire; SiGe;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-4673-0837-3

Type

conf

DOI

10.1109/IMFEDK.2012.6218632

Filename

6218632