Silver nanoclusters formation by using thermal annealing on porous GaAs

In this paper, theoretical interaction between semiconductor and metal nanoparticles assembled into superstructures is studied. Silver (Ag) was used to fabricate nanosized metal particles embedded in porous GaAs (π-GaAs). The formation of the porous GaAs layers was illustrated in simple measurement. First, the π-GaAs was obtained using conventional electrochemical etching method which will change it into nanostructure where the structure becomes more stable and increases it effectiveness. Then, Ag layer was sputtered onto π-GaAs with thickness about 10nm using RF sputtering and then undergo thermal annealing process with different temperatures at 600, 700 and 800°C. The silver nanoclusters formation with different sizes has been confirmed by scanning electron microscopy(SEM)and then was subjected to photoluminescence (PL)and Raman measurement.The SP propagation along metal/surface is determined by various factors such as the size and shape of metal islands.Having a highly anisotropic shape the silver nanoclusters are expected to show complex behavior of SP oscillations.