Impact of hot carrier degradation on MOSFET small-signal input, output, and transmission features

Author

Garcia-Garcia, Daniel ; Vega-Gonzalez, Victor H. ; Torres-Torres, R. ; Gutierrez-D, E.A.

Author_Institution

INAOE, Tonantzintla, Mexico

fYear

2014

fDate

2-4 April 2014

Firstpage

1

Lastpage

5

Abstract

An analysis of the level of hot carrier (HC) degradation caused in sub-100 nm n-type MOSFETs operated from DC up to 20 GHz, is introduced. The analysis comes accompanied with experimental results. The degradation process is done through the application of controlled DC currents at well defines periods of time. The recorded S-parameters before and after DC degradation allows the observation of the corresponding changes in the transmission and reflection features, as well as in the intrinsic channel resistance and the transconductance. This analysis is relevant for power CMOS amplifiers operating in the RF frequency regime.

Keywords

CMOS analogue integrated circuits; MOSFET; S-parameters; hot carriers; power amplifiers; semiconductor device reliability; DC currents; MOSFET; S-parameters; channel resistance; frequency 20 GHz; hot carrier degradation; power CMOS amplifiers; size 100 nm; transconductance; Degradation; Hot carriers; Integrated circuit modeling; Logic gates; MOSFET; Scattering parameters; Stress; MOSFET; S-parameters; Small-signal; hot carriers; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICCDCS), 2014 International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

978-1-4799-4684-6

Type

conf

DOI

10.1109/ICCDCS.2014.7016163

Filename

7016163