Title :
Device and circuit performance evaluation and improvement of SiGe Tunnel FETs
Author :
Mishr, R. ; Ghosh, Bahniman ; Banerjee, Sanjay K.
Author_Institution :
Dept. of EE, IIT Kanpur, Kanpur, India
Abstract :
Investigation on Tunnel FETs in recent years have proved them to be better than conventional MOSFETs lower subthreshold swing, lower power consumption and their scaling is not limited by quantum mechanical effects. Improvement in the on-current of TFETs has been proposed by the use of SiGe layer on the source side. This paper investigates the effect of different Ge mole fractions on the performance of various benchmark circuits (inverter, inverter with constant load, 8 bit ripple carry adder (RCA), 5 stage ring oscillator, 10 stage NAND and NOR chain). A method of the Ion/Ioff ratio of TFETs with high Ge composition, by grading the Ge composition has also been suggested.
Keywords :
Ge-Si alloys; MOSFET; electric current; multilayers; power consumption; Ge composition; Ge mole fraction effect; Ion/Ioff ratio; SiGe; SiGe layer; SiGe tunnel FET improvement; TFET on-current; benchmark circuits; circuit performance evaluation; conventional MOSFET; device performance evaluation; power consumption; quantum mechanical effects; source side; subthreshold swing;
Conference_Titel :
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-8853-7
DOI :
10.1109/ESCINANO.2010.5701031
