Title :
A reversible channel current effect in MOSFETs
Author :
Huerta-G, O.V. ; Gutierrez-D, E.A.
Author_Institution :
Dept. of Electron., Nat. Inst. for Astrophys., Opt. & Electron. (INAOE), Puebla, Mexico
Abstract :
A set of experimental results showing a source-to-drain and drain-to-source reversible channel current in a 28 nm nMOSFET is introduced. By numerical modeling we found out that the reversible channel current is understood bY incorporating the Density Gradient (DG) theory, which explains the reversible current by a change of sign in the gradient of the generalized quantum potential along the channel. The effect is only observable at low drain voltages, where a slight initial internal channel conductance (at no bias) unbalance causes the channel current to reverse when the gate voltage sweeps from low to high values.
Keywords :
MOSFET; density functional theory; density gradient theory; drain-to-source reversible channel current; internal channel conductance; nMOSFET; size 28 nm; source-to-drain reversible channel current; Current density; Electric potential; Logic gates; MOSFET; Semiconductor device modeling; Threshold voltage; Density Gradient model; MOSFET conductance;
Conference_Titel :
Devices, Circuits and Systems (ICCDCS), 2014 International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4799-4684-6
DOI :
10.1109/ICCDCS.2014.7016173
