A high speed snap-shot mode readout circuit for QWIP IR FPAs

Author

Ma, Wenlong ; Shi, Yin ; Zhang, Yaohui ; Wu, Zhenyan

Author_Institution

Neural Networks Lab., Inst. of Semicond., Beijing, China

fYear

2009

fDate

25-27 May 2009

Firstpage

1012

Lastpage

1015

Abstract

The design and fabrication of a Snap-shot mode high speed ROIC for GaAs/AlGaAs QWIP FPAs was reported. The snap-shot CTIA input stage with pixel-level skimming increased the readout speed and integrated voltage swing. The column-shared CDS circuits improved the noise and speed performance under low power dissipation. The multiplexed sampling voltage is buffered to output with high speed output buffer amplifier. The experimental ROIC chip of 128times128 array is fabricated using 0.35 um CMOS mixed signal process. The chip has charge capacity of 2.57times10⁶ electrons and transimpedance of 1 times 10⁸Omega. The measurements show that the readout speed is 10 Mbps, the maximum frame rate is 640 frame/s for 128times128 FPAs under the 3.3 V supply voltage.

Keywords

CMOS integrated circuits; III-V semiconductors; focal planes; gallium arsenide; infrared detectors; integrated optoelectronics; photodetectors; quantum well devices; readout electronics; CMOS mixed signal process; GaAs-AlGaAs; bit rate 10 Mbit/s; focal plane array; high speed output buffer amplifier; high speed snap-shot mode readout circuit; integrated voltage swing; low power dissipation; multiplexed sampling voltage; pixel-level skimming; quantum-well infrared photodetector; size 0.35 mum; voltage 3.3 V; CMOS process; Circuits; Electrons; Fabrication; Gallium arsenide; Power dissipation; Signal processing; Signal sampling; Velocity measurement; Voltage; CDS; CTIA; ROIC; transimpedance;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics and Applications, 2009. ICIEA 2009. 4th IEEE Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4244-2799-4

Electronic_ISBN

978-1-4244-2800-7

Type

conf

DOI

10.1109/ICIEA.2009.5138353

Filename

5138353