DocumentCode :
233356
Title :
Designing high power RF amplifiers: An analytic approach
Author :
De Souza, M.M. ; Rasheduzzaman, Md ; Kumar, S. Nandha
Author_Institution :
EEE Dept., Univ. of Sheffield, Sheffield, UK
fYear :
2014
fDate :
2-4 April 2014
Firstpage :
1
Lastpage :
5
Abstract :
An analytic approach to prototype RF Power Amplifiers is demonstrated at 3.5 GHz. The approach can predict not only matching impedances to high accuracy, but also the small signal gain and PldB in comparison to measurement. Moreover, the method allows a simple and direct route to correlate device and process technology to RF system performance currently unfeasible via TCAD modelling. The work is motivated by the objective to facilitate a higher efficiency, lower cost to prototyping, particularly where vendor models from some manufacturers are still under development.
Keywords :
impedance matching; microwave power amplifiers; network synthesis; RF power amplifiers; TCAD modelling; frequency 3.5 GHz; high power RF amplifier; impedance matching; small signal gain; Analytical models; Gain; Gallium nitride; HEMTs; Power amplifiers; Radio frequency; Silicon; Analytic Approach; GaN HEMT; RF power Amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Devices, Circuits and Systems (ICCDCS), 2014 International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4799-4684-6
Type :
conf
DOI :
10.1109/ICCDCS.2014.7016181
Filename :
7016181
Link To Document :
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