Title :
Role of a-Si in enhancing the current gain of Si-based MSM photodetector using conventional method
Author :
Piin, Lim Shyue ; Hashim, Md Roslan
Author_Institution :
Nano-Optoelectron. Res. & Technol. Lab. (N.O.R), Univ. Sains Malaysia, Minden, Malaysia
Abstract :
Role of a-Si in enhancing the current gain of Si-based MSM photodetector using conventional method is reported.the effect of a thin un-hydrogenated amorphous silicon layer (a-Si) on the performance of Si-based MSM photodetector (MSM-PD) was studied. Thermal evaporation technique was used to deposit the aSi layer on crystalline silicon substrate. a-Si layer was shown to decrease dark current of Si-based MSM-PD up to five orders of magnitude. a-Si layer was used as barrier enhancement layer in one MSM structure and capping layer in another structure. At applied bias of 5V, the latter structure exhibits lower dark current leading to photocurrent-to-dark current ratio of ~ 800 (white light 15W).
Keywords :
amorphous semiconductors; dark conductivity; elemental semiconductors; metal-semiconductor-metal structures; photodetectors; silicon; vacuum deposition; Si; barrier enhancement layer; capping layer; crystalline silicon substrate; dark current; metal-semiconductor-metal photodetector; power 15 W; thermal evaporation; unhydrogenated amorphous silicon layer; voltage 5 V;
Conference_Titel :
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-8853-7
DOI :
10.1109/ESCINANO.2010.5701044