DocumentCode
2333588
Title
Role of a-Si in enhancing the current gain of Si-based MSM photodetector using conventional method
Author
Piin, Lim Shyue ; Hashim, Md Roslan
Author_Institution
Nano-Optoelectron. Res. & Technol. Lab. (N.O.R), Univ. Sains Malaysia, Minden, Malaysia
fYear
2010
fDate
1-3 Dec. 2010
Firstpage
1
Lastpage
2
Abstract
Role of a-Si in enhancing the current gain of Si-based MSM photodetector using conventional method is reported.the effect of a thin un-hydrogenated amorphous silicon layer (a-Si) on the performance of Si-based MSM photodetector (MSM-PD) was studied. Thermal evaporation technique was used to deposit the aSi layer on crystalline silicon substrate. a-Si layer was shown to decrease dark current of Si-based MSM-PD up to five orders of magnitude. a-Si layer was used as barrier enhancement layer in one MSM structure and capping layer in another structure. At applied bias of 5V, the latter structure exhibits lower dark current leading to photocurrent-to-dark current ratio of ~ 800 (white light 15W).
Keywords
amorphous semiconductors; dark conductivity; elemental semiconductors; metal-semiconductor-metal structures; photodetectors; silicon; vacuum deposition; Si; barrier enhancement layer; capping layer; crystalline silicon substrate; dark current; metal-semiconductor-metal photodetector; power 15 W; thermal evaporation; unhydrogenated amorphous silicon layer; voltage 5 V;
fLanguage
English
Publisher
ieee
Conference_Titel
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-8853-7
Type
conf
DOI
10.1109/ESCINANO.2010.5701044
Filename
5701044
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