DocumentCode
2334029
Title
A linear 0.18um CMOS Distributed Low Noise Amplifier from 3.1 to 10.6 GHz with cascode cells
Author
Shamsadini, Shila ; Kashani, Farokh Hojat ; Bathaei, Neda
Author_Institution
Electr. Eng., Azad Univ., Tehran, Iran
fYear
2010
fDate
1-3 Dec. 2010
Firstpage
1
Lastpage
2
Abstract
In this paper, we propose a design methodology of 3.1-10.6GHz Ultra-wideband (UWB) Distributed Low Noise Amplifier using standard TSMC 0.18um CMOS technology. The four cells DLNA, each cell contains cascode architecture, can be use in broadband applications. The proposed distributed low noise amplifier has an appropriate input and output matching over the full band of 3.1-10.6 GHz. We achieve acceptable results for low noise amplifier as a flat power gain of 12dB (S2ι) from 3.1 to 10.6GHz, which is ripple only +0.3 dB over the full UWB band. The proposed DLNA has an excellent linear behavior.
Keywords
CMOS integrated circuits; low noise amplifiers; ultra wideband technology; CMOS technology; DLNA; UWB distributed LNA; cascode cells; distributed low noise amplifier; frequency 3.1 GHz to 10.6 GHz; size 0.18 micron; ultra-wideband distributed LNA;
fLanguage
English
Publisher
ieee
Conference_Titel
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-8853-7
Type
conf
DOI
10.1109/ESCINANO.2010.5701067
Filename
5701067
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