Title :
0.18um 3.1–10.6GHz CMOS UWB LNA with 25 ±1dB gain
Author :
Shamsadini, Shila ; Kashani, Farokh Hojat ; Bathaei, Neda
Author_Institution :
Electr. Eng., Azad Univ., Tehran, Iran
Abstract :
A 3.1-10.6GHz ultra-wideband low noise-amplifier (UWB LNA) using standard 0.18um CMOS technology has been reported. A two-stage, common-gate in cascade with cascode, UWB LNA has been proposed to achieve more than 10dB input and output return loss, high gain of 26dB, and NF of 2.9dB over the full frequency band. The proposed LNA consumes 10mW from 1.8V supply. The designed LNA has an excellent high gain in comparison with previous works.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; field effect MMIC; low noise amplifiers; ultra wideband technology; CMOS technology; frequency 3.1 GHz to 10.6 GHz; gain 2.9 dB; gain 26 dB; power 10 mW; return loss; size 0.18 mum; ultra-wideband low noise-amplifier; voltage 1.8 V;
Conference_Titel :
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-8853-7
DOI :
10.1109/ESCINANO.2010.5701068
