• DocumentCode
    2334109
  • Title

    Study of silicon quantum dots structure growth using radio frequency magnetron sputtering

  • Author

    Sakrani, Samsudi ; Idrees, Fatima Aldaw ; Othaman, Zulkafli ; Ismail, Abd Khamim

  • Author_Institution
    Phys. Dept., Univ. Teknol. Malaysia, Skudai, Malaysia
  • fYear
    2010
  • fDate
    1-3 Dec. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Silicon quantum dots have been grown on sapphire substrate using a self-assembly method of physical vapour deposition. The samples were fabricated at low sputtering rate and varying experimental conditions. Apparently, the onset of nucleation took place during the first 5 minutes of deposition, followed by a further growth of stable island nanodots, with the measured comparable to the predicted values.
  • Keywords
    elemental semiconductors; island structure; nanofabrication; nucleation; self-assembly; semiconductor growth; semiconductor quantum dots; silicon; sputter deposition; Al2O3; Si; nucleation; physical vapour deposition; radio frequency magnetron sputtering; sapphire substrate; silicon quantum dots; stable island nanodots; time 5 min;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4244-8853-7
  • Type

    conf

  • DOI
    10.1109/ESCINANO.2010.5701070
  • Filename
    5701070
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2334109