Formation and characterization of silicon self-assembled nanodots

One of the most important fields in semiconductor physics is study the nanostructure of materials with dimensions less than 2-like quantum dots -QD. Si quantum dot is one of typical material used in nanostructure, because of their unique and useful functions caused from quantized electron energy state. Although various formation techniques have been developed so far to achieve high-density and nanometer-size. In general silicon QDs can be formed on non-crystalline substrates, such as glass. Si quantum dots have been successfully grown on corning glass (7059) substrate. This nucleation starts to appear at first 7 min of QDs growth formation until stable conditions of the dots. The measurement results estimated average dots size to be 53 nm is confirmed by using AFM. The most common technique RF magnetron sputtering system that deposit Si-QDs depend on plasma excitation at high temperature of more than 500°C. The effects of variety parameters of temperature, gas flow rate, and RFpower obtain different Si-QDs structural properties, as in fig (1). Also, by analyzing their structural and optical properties, may get the best growth formulation of Si-QDs, table (1). Nanotechnology is dealing with nanostructure of materials and its properties change radically as their size decrease, that have follow down almost the atomic energy levels. The PL peak located at 687 nm, fig (2), that informed band gap energy = 1.807eV. The formation of Silicon on the substrate confirms using EDX measurement, fig (3). The physical characteristics of the substrate (lattice parameter, crystalline structures and surface free energies) are leading to diverse the growth modes, fig (4) [2]. This result support Usual Si atomic structure defect could be a dominating obstacle to high luminescence efficiencies. Si-QDs have been studied due to proposed future applications in electronics and photonic devices. On the other hand it´s a common technique that promises to fabricate single-electron memo- - ry (SEM) and transistor (SET) devices on a single integrated chip that hasn´t enough consideration.